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Gate induced quantum wires in GaAs/AlGaAs heterostructures by cleaved edge deposition

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Gate induced quantum wires in GaAs/AlGaAs heterostructures by cleaved edge deposition

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Nonuniversal conductance quantization in quantum wires.

  • In the second step, tungsten top-gates are evaporated and structured via e-beam deposition, photolithography and plasma etching.

  • Evolution of the quantum Hall bulk spectrum into chiral edge states.

  • In the past, the fabrication of one-dimensional 1D wires has been a particular challenge because they have to be defect-free over their whole length, which can be several tens ┬Ám.




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